Veinasa-Dht11 Dht11 Arduino numérique Dht11 Module de capteur de température et d'humidité Capteur de température RS485module Dht11 pour humidificateur

• Personnalisation: Disponible
• Type d'installation: incorporer
• Contact: Sans contact
• N° de Modèle.: Veinasa-DHT11
• Type de sortie Signal: Digital
• Moyen de mesure: température et humidité
• Personnalisé: Personnalisé
• plage de mesure de l'humidité: 20 ~ 95%
• résolution d'humidité: 1 % hr
• précision de l'humidité: ±0,5 ºc
• précision de la température: ±0,5 ºc
• plage de mesure de la température: -20~60ºc
• résolution de la température: 0,1ºc
• Paquet de Transport: recouvert d'emballage en carton
• Spécifications: 13*23.2*5.8mm
• Marque Déposée: veinasa
• Origine: Chine

Description de Produit

Veinasa-DHT11 DHT11 Digital Arduino DHT11 Temperature and Humidity Sensor Module Temperature Sensor RS485Module DHT11 for Humidifier

Product Description

The Veinasa-DHT11 is a temperature and humidity sensor module with calibrated digital output. It uses high molecular humidity resistor as sensing element, which is converted into digital signal output after collection and processing by MCU.
 

It has the characteristics of long-term stability, high reliability, high precision and low power consumption. Free from interference such as power supply noise and voltage fluctuations.

Product Parameters

Table 1: Relative humidity

Parameter	Conditions	Minimum	Typical	Maximum	Unit
Resolution			1		%RH
Measuring range		20		95	%RH
Precision	25ºC	±5	±3	±5	%RH
Repeatability			±0.1
Response time	1/e(63%)		< 8		S
Retardation			±0.5		%RH
Drift	Typical value		< 3		%RH/y

Table 2 Temperature

Parameter	Conditions	Minimum	Typical	Maximum	Unit
Resolution			0.1		ºC
Measuring range		-20		60	ºC
Precision			±0.5		ºC
Repeatability			±0.2		ºC
Response time	1/e(63%)	1			S
Retardation			±0.1
Drift	Typical value		< 0.2		ºC/y

Electrical characteristics

Parameter	Conditions	Minimum	Typical	Maximum	Unit
Supply voltage VDD		3.0	5	5.5	V
Supply current	Sleep mode		0.6	2	uA
	Measurement mode		2.0	2.5	mA
Sampling period			2.0		S
Low output voltage	Io<4mA	0		250	mV
High level output voltage	The Rp < 25 k Ω	80%		100%	VDD
Low-level input voltage	Falling edge	0%		20%	VDD
High level input voltage	Rising edge	80%		100%	VDD
Output current	On			4	mA
	Three-state gate (Off)		10	20	μA

Table 3: Io represents low level output current Rp represents pull-up resistance

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